Транзистор IRFS634B
70.00 ден (вклучено ДДВ)250V, 5.8A, 38W, 0.45Ω, Advanced Power MOSFET, N-channel FET, enhancement type+diode
Транзистор IRFS640A
60.00 ден (вклучено ДДВ)200V, 9.8A, 43W, 0.18Ω, Advanced Power MOSFET, N-channel FET, enhancement type+diode
Транзистор IRFS640B
60.00 ден (вклучено ДДВ)200V, 18A, 43W, 0.18Ω, Advanced Power MOSFET, N-channel FET, enhancement type+diode
Транзистор IRFS730B
60.00 ден (вклучено ДДВ)400V, 5.5A, 38W, 1Ω, Advanced Power MOSFET, N-channel FET, enhancement type+diode
Транзистор IRFS740B
80.00 ден (вклучено ДДВ)400V, 10A, 44W, 0.54Ω, Advanced Power MOSFET, N-channel FET, enhancement type+diode
Транзистор IRFS820B
80.00 ден (вклучено ДДВ)500V, 2.5A, 33W, 2.6Ω, Advanced Power MOSFET, N-channel FET, enhancement type+diode
Транзистор IRFS830B
50.00 ден (вклучено ДДВ)500V, 4.5A, 38W, 1.5Ω, Advanced Power MOSFET, N-channel FET, enhancement type+diode
Транзистор IRFS840B
60.00 ден (вклучено ДДВ)500V, 8A, 44W, 0.8Ω, Advanced Power MOSFET, N-channel FET, enhancement type+diode
Транзистор IRFS9634N
80.00 ден (вклучено ДДВ)250V, 3.4A, 33W, 0.45Ω, Power MOSFET, P-channel FET, enhancement type
Транзистор ISL9V2040S3ST
460.00 ден (вклучено ДДВ)SMD, 430V, 10A, 130W, 200mJ, N-Channel Ignition IGBT
Транзистор ISL9V3040D3ST
180.00 ден (вклучено ДДВ)SMD, 400V, 21A, 150W, 300mJ, N−Channel Ignition IGBT
Транзистор ISL9V5036S3S
180.00 ден (вклучено ДДВ)SMD, 360V, 46A, 250W, 500mJ, N−Channel Ignition IGBT
