Прикажани 145–156 од 311 резултати
SMD, 48V, 1.5A, 1.4W, 0.2Ω, Mini PROFET, Field effect transistor N-channel FET, enhancement type with diode
SMD, 40V, 1.5A, 1.8W, 0.2Ω, Mini PROFET, Field effect transistor N-channel FET, enhancement type with diode
SMD, 60V, 2.9A, 1.8W, 0.13Ω, SIPMOS, Field effect transistor P-channel FET, enhancement type with diode
SMD, 40V, 0.4A, 1.5W, 0.35Ω, SIPMOS, Field effect transistor N-channel FET, enhancement type
SMD, 52V, 1.7A, 1.5W, 0.2Ω, SIPMOS, Field effect transistor N-channel FET, enhancement type
SMD, 60V, 0.7A, 1.8W, 0.55Ω, Logic Level, Field effect transistor N-channel FET, enhancement type with diode
SMD, 40V, 2.4A, 1.5W, 0.1Ω, SIPMOS, Field effect transistor N-channel FET, enhancement type
SMD, 42V, 2.17A, 3.8W, 0.1Ω, Logic Level, Field effect transistor N-channel FET, enhancement type with diode
SMD, 240V, 0.1A, 0.36W, 14Ω, Logic Level, SIPMOS, Field effect transistor N-channel FET, enhancement type with diode
SMD, 240V, 0.03A, 0.36W, 30Ω, SIPMOS, Field effect transistor N-channel FET, depletion type with diode
50V, 8A, 40W, 0.3Ω, TEMPFET, Metal oxide transistor P-channel FET, enhancement type
60V, 11.5A, 40W, 0.17Ω, TEMPFET, Logic Level, Temperature sensor with thyristor characteristic, Metal oxide transistor N-channel FET, enhancement type
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