Транзистор BTS113A
190.00 ден (вклучено ДДВ)60V, 11.5A, 40W, 0.17Ω, TEMPFET, Logic Level, Temperature sensor with thyristor characteristic, Metal oxide transistor N-channel FET, enhancement type
Транзистор BTS114
340.00 ден (вклучено ДДВ)50V, 14A, 50W, 0.10Ω, TEMPFET, Metal oxide transistor N-channel FET, enhancement type
Транзистор BTS115A
460.00 ден (вклучено ДДВ)50V, 15.5A, 50W, 0.12Ω, TEMPFET, Logic Level, Metal oxide transistor N-channel FET, enhancement type
Транзистор BTS117
170.00 ден (вклучено ДДВ)60V, 3.5A, 50W, 0.1Ω, HITFET, Logic Level, Low-side Switch, Metal oxide transistor N-channel FET, enhancement type
Транзистор BTS117TC
420.00 ден (вклучено ДДВ)SMD, 60V, 3.5A, 50W, 0.1Ω, HITFET, Power Switch ICs – Power Distribution, N channel vertical power FET in Smart SIPMOS® technology. Providing embedded protection function
Транзистор BTS118D
370.00 ден (вклучено ДДВ)SMD, 42V, 2.4A, 21W, 0.1Ω, HITFET II Generation, Smart Lowside Power Switch
Транзистор BTS121A
240.00 ден (вклучено ДДВ)100V, 22A, 95W, 0.1Ω, TEMPFET, Logic Level, Metal oxide transistor N-channel FET, enhancement type
Транзистор BTS140A
300.00 ден (вклучено ДДВ)50V, 42A, 125W, 0.028Ω, TEMPFET, Metal oxide transistor N-channel FET, enhancement type
Транзистор BTS141
300.00 ден (вклучено ДДВ)60V, 12A, 149W, 0.028Ω, HITFET, Logic Level, Low-side Switch, Metal oxide transistor N-channel FET, enhancement type
Транзистор BTS141TC
410.00 ден (вклучено ДДВ)60V, 12A, 149W, 0.028Ω, HITFET, Logic Level, Low-side Switch, Metal oxide transistor N-channel FET, enhancement type
Транзистор BTS2140-1B
310.00 ден (вклучено ДДВ)SMD, 60V, 42A, 75W, Metal oxide N-channel field effect
