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Транзистор IPW60R099CP

900.00 ден (вклучено ДДВ)
600V, 31A, 255W, 0.099Ω, CoolMOS Power Transistor, N-channel FET, enhancement type

Транзистор IPW60R160C6

920.00 ден (вклучено ДДВ)
600V, 23.8A, 176W, 0.16Ω, CoolMOS C6 Power Transistor, N-channel FET, enhancement type

Транзистор IPW60R190C6

500.00 ден (вклучено ДДВ)
600V, 20.2A, 151W, 0.19Ω, CoolMOS C6 Power Transistor, N-channel FET, enhancement type

Транзистор IPW60R199CP

360.00 ден (вклучено ДДВ)
600V, 16A, 139W, 0.199Ω, CoolMOS Power Transistor, N-channel FET, enhancement type

Транзистор IRF9952

130.00 ден (вклучено ДДВ)
SMD, 30V, 3.5A/2.3A, 2W, 0.1Ω/0.25Ω, HEXFET Power MOSFET, Dual N/P-channel FET, enhancement type+diode

Транзистор IRF9953

160.00 ден (вклучено ДДВ)
SMD, 30V, 2.3A, 2W, 0.25Ω, HEXFET Power MOSFET, Dual P-channel FET, enhancement type+diode

Транзистор ITS4140N

200.00 ден (вклучено ДДВ)
SMD, 60V, 0.7A, 1.7W, 1Ω, SIPMOS Technology, Power MOSFET, N-channel FET

Транзистор ITS4141N

200.00 ден (вклучено ДДВ)
SMD, 47V, 1.1A, 1.4W, 0.2Ω, SIPMOS Technology, Power MOSFET, N-channel FET

Транзистор K30T120

430.00 ден (вклучено ДДВ)
1200V, 60A, 270W, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode

Транзистор K30T60

450.00 ден (вклучено ДДВ)
600V, 60A, 187W, IKW30N60T, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode

Транзистор K40T120

710.00 ден (вклучено ДДВ)
1200V, 75A, 270W, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode

Транзистор K40T1202

1,090.00 ден (вклучено ДДВ)
1200V, 75A, 270W, 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode, N Channel IGBT+diode