Тиристор CR03AM12
50.00 ден (вклучено ДДВ)600V, 0.47A, IGT<100µA, 0.1W, Low Power Non-Insulated Glass Passivation Type Thyristor
Тиристор CR5AS12
100.00 ден (вклучено ДДВ)600V, 7.8A, IGT<200µA, 0.1W, Low Power Non-Insulated Glass Passivation Type Thyristor
Транзистор 2SA872A
20.00 ден (вклучено ДДВ)90V/90V, 0.05A, 0.3W, 120MHz, Bipolar (BJT) Transistor PNP
Транзистор 2SC1222
20.00 ден (вклучено ДДВ)50V/45V, 0.05A, 0.25W, 100MHz, Bipolar (BJT) Transistor NPN
Транзистор 2SC4550
130.00 ден (вклучено ДДВ)100V/60V, 7A, 30W, 150MHz, Bipolar (BJT) Transistor NPN
Транзистор 2SK1307
230.00 ден (вклучено ДДВ)100V, 20A, 35W, 0.065Ω, 4V Gate Drive, Metal oxide transistor Power N-channel FET, enhancement type+diode
Транзистор 2SK1808
200.00 ден (вклучено ДДВ)900V, 4A, 35W, 4Ω, Metal oxide transistor N-channel FET, enhancement type+diode
Транзистор 2SK2225
450.00 ден (вклучено ДДВ)1500V, 2A, 50W, 12Ω, Metal oxide transistor Power N-channel FET, enhancement type+diode
Транзистор 2SK3115B
150.00 ден (вклучено ДДВ)600V, 6A, 35W, 1.2Ω, Field effect transistor Power N-channel MOS FET, enhancement type
Транзистор 2SK3235
310.00 ден (вклучено ДДВ)500V, 15A, 150W, 0.3Ω, Metal oxide transistor Power N-channel FET, enhancement type
Транзистор H5N3011P
440.00 ден (вклучено ДДВ)300V, 88A, 150W, 0.048Ω/10V, Metal oxide N-channel FET, enhancement type+diode
Транзистор HAT2215R
160.00 ден (вклучено ДДВ)SMD, 80V, 3.4A, 1.5W, 0.145Ω, Dual, 4.5V-Drive Power Amplifier, Silicon N Channel Power MOSFET with diode
