Транзистор STGW30NC60KD
390.00 ден (вклучено ДДВ)600V, 60A, 200W, short circuit rugged IGBT, N-Channel IGBT
Транзистор STGW30NC60VD
1,110.00 ден (вклучено ДДВ)600V, 80A, 250W, Very fast switching PowerMESH IGBT, Very soft ultra fast recovery antiparallel diode, N-Channel IGBT+diode
Транзистор STGW30NC60W
540.00 ден (вклучено ДДВ)600V, 60A, 200W, Ultra fast switching PowerMESH IGBT, N-Channel IGBT
Транзистор STGW40N120KD
690.00 ден (вклучено ДДВ)1200V, 80A, 240W, Short Circuit Rated with Ultrafast diode, N-Channel IGBT+diode
Транзистор STGW45HF60WD
530.00 ден (вклучено ДДВ)600V, 70A, 250W, Ultra fast soft recovery antiparallel diode, Ultrafast N-Channel IGBT+diode
Транзистор STGW60H60DLFB
1,060.00 ден (вклучено ДДВ)600V, 80A, 375W, HB series, Trench gate field-stop, soft recovery co-packaged diode, N-Channel IGBT+diode
Транзистор STGW80H65DFB
880.00 ден (вклучено ДДВ)650V, 80A, 470W, Trench gate field-stop, High speed HB series IGBT, integrated anti-parallel diode, N Channel IGBT
Транзистор STGWT40H65FB
710.00 ден (вклучено ДДВ)650V, 40A, 283W, 198pF, 13nS, High Speed Trench Gate Field Stop N-Channel IGBT+diode
Транзистор STP10NK60Z
80.00 ден (вклучено ДДВ)600V, 10A, 115W, 0.75Ω, SuperMESH Power MOSFET, N-channel FET, enhancement type+zener diode
Транзистор STP10NK60ZFP
90.00 ден (вклучено ДДВ)600V, 10A, 35W, 0.75Ω, SuperMESH Power MOSFET, N-channel FET, enhancement type+zener diode
Транзистор STP10NK80Z
160.00 ден (вклучено ДДВ)800V, 9A, 160W, 0.9Ω, SuperMESH Power MOSFET, N-channel FET, enhancement type+zener diode
