Транзистор GT30F133
250.00 ден (вклучено ДДВ)Vces=360V, Icp=200A, 125W, N-Channel Current Rating IGBT
Транзистор GT30F133 TO-263
300.00 ден (вклучено ДДВ)SMD, Vces=360V, Icp=200A, 125W, N-Channel Current Rating IGBT
Транзистор GT30J122
300.00 ден (вклучено ДДВ)Vces 600V, Icp 100A, 75W, 4th Generation N-Channel IGBT
Транзистор GT30J322
650.00 ден (вклучено ДДВ)600V, 30A, 75W, High Speed, Enhancement mode type, 4th Generation, FRED included between emitter and collector, Silicon N-Channel IGBT+diode