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Транзистор GT60M104

580.00 ден (вклучено ДДВ)
900V, 60A, 200W, High Speed, N-Channel IGBT

Транзистор GT60M301

580.00 ден (вклучено ДДВ)
900V, 60A, 200W, High Speed, N-Channel IGBT+diode

Транзистор GT60M303

600.00 ден (вклучено ДДВ)
900V, 60A, 170W, High Speed, N-Channel IGBT+diode

Транзистор GT60M324

640.00 ден (вклучено ДДВ)
900V, 60A, 254W, High Speed, N-Channel IGBT+diode

Транзистор GT60N321

650.00 ден (вклучено ДДВ)
1000V, 60A, 170W, High Speed, Enhancement mode type, 4th Generation, FRED included between emitter and collector, Silicon N-Channel IGBT+diode

Транзистор H20R1202

420.00 ден (вклучено ДДВ)
1200V, 40A, 330W, Reverse conducting Transistor IGBT with monolithic body diode, IHW20N120R2

Транзистор H20R1203

440.00 ден (вклучено ДДВ)
1200V, 40A, 310W, Reverse conducting Transistor IGBT with monolithic body diode, IHW20N120R3

Транзистор H5N3011P

440.00 ден (вклучено ДДВ)
300V, 88A, 150W, 0.048Ω/10V, Metal oxide N-channel FET, enhancement type+diode

Транзистор HAT2215R

160.00 ден (вклучено ДДВ)
SMD, 80V, 3.4A, 1.5W, 0.145Ω, Dual, 4.5V-Drive Power Amplifier, Silicon N Channel Power MOSFET with diode

Транзистор HAT3010R

310.00 ден (вклучено ДДВ)
SMD, 60V, 5A/6A, 2W, 0.04Ω, Dual, 4.5V-Drive Power Amplifier, Silicon N/P Channel Power MOS FET with diode

Транзистор HGT1S7N60A4DS

180.00 ден (вклучено ДДВ)
SMD, 600V, 34A, 125W, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode IGBT

Транзистор HGTG11N120CND

410.00 ден (вклучено ДДВ)
1200V, 43A, 298W, NPT Series, Anti-Parallel Hyperfast Diode, N-Channel IGBT+diode