Прикажани 433–444 од 1710 резултати
SMD, 200V, 0.14A, 1.8W, 3.5Ω, SIPMOS, Field effect transistor N-channel FET, depletion type with diode
SMD, 60V, 1.9A, 1.8W, 0.3Ω, SIPMOS, Field effect transistor P-channel FET, depletion type with diode
SMD, 60V, 1.9A, 1.8W, 0.3Ω, Logic Level, SIPMOS, Field effect transistor P-channel FET, depletion type with diode
SMD, 30V, 3A, 5W, 0.25Ω, Logic Level, Field effect transistor P-channel FET, enhancement type with diode
SMD, 60V, 1.8A, 1.8W, 0.3Ω, SIPMOS, Field effect transistor N-channel FET, enhancement type with diode
SMD, 100V, 1.1A, 1.79W, 0.7Ω, Logic Level, SIPMOS, Field effect transistor N-channel FET, enhancement type with diode
SMD, 200V, 0.66A, 1.8W, 1.8Ω, Logic Level, SIPMOS, Field effect transistor N-channel FET, enhancement type with diode
SMD, 400V, 0.5A, 1.8W, 3Ω, SIPMOS, Field effect transistor N-channel FET, enhancement type
SMD, 500V, 0.4A, 1.8W, 4Ω, SIPMOS, Field effect transistor N-channel FET, enhancement type
SMD, 60V, 1.17A, 1.8W, 0.8Ω, Logic Level, SIPMOS, Field effect transistor P-channel FET, enhancement type with diode
SMD, 60V, 2.6A, 1.8W, 0.09Ω, Logic Level, SIPMOS, Field effect transistor N-channel FET, enhancement type with diode
SMD, 50V, 3.8A, 1.8W, 0.07Ω, Logic Level, SIPMOS, Field effect transistor N-channel FET, enhancement type with diode
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