Прикажани 1753–1764 од 3862 резултати
700V/400V, 5A, 75W, 5MHz, Bipolar (BJT) Transistor NPN+diode
200V, 0.15A, 0.83W, 28Ω, Logic Level, Metal oxide transistor N-channel FET, enhancement type with diode
200V, 0.25A, 0.35W, 6.4Ω, Logic Level, Metal oxide transistor N-channel FET, enhancement type with diode
200V, 0.25A, 0.35W, 8Ω, Logic Level, Metal oxide transistor N-channel FET, enhancement type with diode
60V, 0.5A, 0.83W, 5Ω, Logic Level, Field effect transistor N-channel FET, enhancement type with diode
SMD, 60V, 0.15A, 0.33W, 5Ω, Logic Level, Field effect transistor N-channel FET, enhancement type with diode
45V, 0.23A, 0.7W, 14Ω, Logic Level, Field effect transistor P-channel FET, enhancement type
SMD, 45V, 0.09A, 0.33W, 14Ω, Logic Level, Field effect transistor P-channel FET, enhancement type
60V, 0.4A, 0.625W, 2Ω, Field effect transistor N-channel FET, enhancement type with diode
270V, 0.25A, 1W, 8Ω, Logic Level, Field effect transistor N-channel FET, enhancement type with diode
300V, 0.25A, 1W, 8Ω, Logic Level, Field effect transistor N-channel FET, enhancement type with diode
SMD, 30V, 6A, 2W, 0.035Ω, Logic Level, SIPMOS, Power MOSFET, Dual N-channel FET, enhancement type+diode
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