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Транзистор IXTP60N10T

190.00 ден (вклучено ДДВ)
100V, 60A, 176W, 0.018Ω, TrenchMVT, Power MOSFET, N-channel FET, enhancement type

Транзистор IXTQ130N10T

800.00 ден (вклучено ДДВ)
100V, 130A, 360W, 0.0091Ω, TrenchMV, Power MOSFET, N-channel FET, enhancement type

Транзистор IXTQ22N50P

560.00 ден (вклучено ДДВ)
500V, 22A, 350W, 0.27Ω, Avalanche Rated, PolarHV Power MOSFET, N-channel FET, enhancement type

Транзистор IXTQ36N50P

300.00 ден (вклучено ДДВ)
500V, 36A, 500W, 0.17Ω, PolarHT, Power MOSFET, N-channel FET, enhancement type

Транзистор IXTQ75N10P

290.00 ден (вклучено ДДВ)
100V, 75A, 300W, 0.025Ω, PolarHT, Power MOSFET, N-channel FET, enhancement type

Транзистор IXXH50N60C3D1

570.00 ден (вклучено ДДВ)
600V, 100A, 600W, XPT, GenX3, Anti-Parallel Ultra Fast Diode, N-Channel IGBT+diode

Транзистор IXYH40N120B3D1

2,080.00 ден (вклучено ДДВ)
1200V, 86A, 480W, GenX3 C3-Class, High Speed XPT IGBT, Anti-Parallel Ultra Fast Diode, N-Channel IGBT+diode

Транзистор J175

30.00 ден (вклучено ДДВ)
30V, 0.05A, 0.35W, 125Ω, J175, Field effect transistor P-channel JFET

Транзистор J304

60.00 ден (вклучено ДДВ)
30V, 0.01A, 0.35W, 125Ω, J304, Field effect transistor N-channel JFET

Транзистор K30T120

430.00 ден (вклучено ДДВ)
1200V, 60A, 270W, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode

Транзистор K30T60

450.00 ден (вклучено ДДВ)
600V, 60A, 187W, IKW30N60T, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode

Транзистор K40T120

710.00 ден (вклучено ДДВ)
1200V, 75A, 270W, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode