Прикажани 16369–16380 од 18759 резултати
SMD, 60V, 1.17A, 1.8W, 0.8Ω, Logic Level, SIPMOS, Field effect transistor P-channel FET, enhancement type with diode
SMD, 60V, 2.6A, 1.8W, 0.09Ω, Logic Level, SIPMOS, Field effect transistor N-channel FET, enhancement type with diode
SMD, 50V, 3.8A, 1.8W, 0.07Ω, Logic Level, SIPMOS, Field effect transistor N-channel FET, enhancement type with diode
SMD, 50V, 0.5A, 1.7W, 5Ω, Mini PROFET, Field effect transistor N-channel FET, enhancement type with diode
SMD, 100V, 1.7A, 1.8W, 0.3Ω, SIPMOS, Field effect transistor N-channel FET, enhancement type with diode
SMD, 48V, 1.5A, 1.4W, 0.2Ω, Mini PROFET, Field effect transistor N-channel FET, enhancement type with diode
SMD, 40V, 1.5A, 1.8W, 0.2Ω, Mini PROFET, Field effect transistor N-channel FET, enhancement type with diode
SMD, 60V/45V, 1A, 1.25W, 200MHz, Bipolar (BJT) Transistor NPN Darlington+diode
SMD, 80V/60V, 1A, 1.25W, 200MHz, Bipolar (BJT) Transistor NPN Darlington+diode
SMD, 90V/80V, 1A, 1.25W, 200MHz, Bipolar (BJT) Transistor NPN Darlington+diode
SMD, 80V/60V, 0.5A, 1.25W, 200MHz, Bipolar (BJT) Transistor PNP Darlington+diode
SMD, 60V, 2.9A, 1.8W, 0.13Ω, SIPMOS, Field effect transistor P-channel FET, enhancement type with diode
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