Транзистор GT60N321
650.00 ден (вклучено ДДВ)1000V, 60A, 170W, High Speed, Enhancement mode type, 4th Generation, FRED included between emitter and collector, Silicon N-Channel IGBT+diode
Транзистор H20R1202
420.00 ден (вклучено ДДВ)1200V, 40A, 330W, Reverse conducting Transistor IGBT with monolithic body diode, IHW20N120R2
Транзистор H20R1203
440.00 ден (вклучено ДДВ)1200V, 40A, 310W, Reverse conducting Transistor IGBT with monolithic body diode, IHW20N120R3
Транзистор H5N3011P
440.00 ден (вклучено ДДВ)300V, 88A, 150W, 0.048Ω/10V, Metal oxide N-channel FET, enhancement type+diode
Транзистор HAT2215R
160.00 ден (вклучено ДДВ)SMD, 80V, 3.4A, 1.5W, 0.145Ω, Dual, 4.5V-Drive Power Amplifier, Silicon N Channel Power MOSFET with diode