Транзистор IKW30N60T
450.00 ден (вклучено ДДВ)600V, 45A, 187W, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon diode, N Channel IGBT+diode
Транзистор IKW40N120H3
1,520.00 ден (вклучено ДДВ)1200V, 80A, 483W, (K40H1203) Trench and Fieldstop technology with soft, fast recovery anti-parallel diode, N Channel IGBT+diode
Транзистор IKW40N120T2
710.00 ден (вклучено ДДВ)1200V, 75A, 480W, (K40T1202) TrenchStop 2nd Generation Series with soft, fast recovery anti-parallel Emitter Controlled Diode
Транзистор IKW40N60H3
590.00 ден (вклучено ДДВ)600V, 80A, 306W, (K40H603) Trench and Fieldstop technology, soft, fast recovery anti-parallel diode, N-Channel IGBT+diode
Транзистор IKW50N60H3
620.00 ден (вклучено ДДВ)600V, 100A, 333W, K50H603 , Highspeed TrenchStop and Fieldstop technology, Verysoft,fast recovery anti-parallel diode, N-channel IGBT+diode
Транзистор IKW50N65H5
780.00 ден (вклучено ДДВ)650V, 80A, 305W, K50H655 , Highspeed 5 IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft antiparallel diode, N-Channel IGBT+diode
Транзистор IKW75N60T
710.00 ден (вклучено ДДВ)600V, 80A, 428W, K75T60 TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon diode, N Channel IGBT+diode
Транзистор IPB09N03LA
100.00 ден (вклучено ДДВ)SMD, 25V, 50A, 63W, 0.0155Ω, Logic Level, OptiMOS®2 Power MOSFET, N-channel FET, enhancement type
Транзистор IPD50R380CE
220.00 ден (вклучено ДДВ)SMD, 500V, 14.1A, 98W, 0.38Ω, CoolMOS CE Power MOSFET, N-channel FET, enhancement type
Транзистор IPD70R360P7S
340.00 ден (вклучено ДДВ)SMD, 700V, 12.5A, 59.5W, 0.36Ω, Power Transistor, N-channel FET, enhancement type
Транзистор IPP034NE7N3G
350.00 ден (вклучено ДДВ)75V, 100A, 214W, 0.0034Ω, OptiMOS 3 Power MOSFET, N-channel FET, enhancement type
Транзистор IPP200N25N
260.00 ден (вклучено ДДВ)250V, 64A, 300W, 0.02Ω, Power MOSFET, N-channel FET, enhancement type
