Транзистор IXTP50N20P
300.00 ден (вклучено ДДВ)200V, 50A, 360W, 0.06Ω, PolarHT, Power MOSFET, N-channel FET, enhancement type
Транзистор IXTP60N10T
190.00 ден (вклучено ДДВ)100V, 60A, 176W, 0.018Ω, TrenchMVT, Power MOSFET, N-channel FET, enhancement type
Транзистор IXTQ130N10T
800.00 ден (вклучено ДДВ)100V, 130A, 360W, 0.0091Ω, TrenchMV, Power MOSFET, N-channel FET, enhancement type
Транзистор IXTQ22N50P
560.00 ден (вклучено ДДВ)500V, 22A, 350W, 0.27Ω, Avalanche Rated, PolarHV Power MOSFET, N-channel FET, enhancement type
Транзистор IXTQ36N50P
300.00 ден (вклучено ДДВ)500V, 36A, 500W, 0.17Ω, PolarHT, Power MOSFET, N-channel FET, enhancement type
Транзистор IXTQ75N10P
290.00 ден (вклучено ДДВ)100V, 75A, 300W, 0.025Ω, PolarHT, Power MOSFET, N-channel FET, enhancement type
Транзистор IXXH50N60C3D1
570.00 ден (вклучено ДДВ)600V, 100A, 600W, XPT, GenX3, Anti-Parallel Ultra Fast Diode, N-Channel IGBT+diode
Транзистор IXYH40N120B3D1
2,080.00 ден (вклучено ДДВ)1200V, 86A, 480W, GenX3 C3-Class, High Speed XPT IGBT, Anti-Parallel Ultra Fast Diode, N-Channel IGBT+diode
Транзистор J175
30.00 ден (вклучено ДДВ)30V, 0.05A, 0.35W, 125Ω, J175, Field effect transistor P-channel JFET
Транзистор J304
60.00 ден (вклучено ДДВ)30V, 0.01A, 0.35W, 125Ω, J304, Field effect transistor N-channel JFET
Транзистор K30T120
430.00 ден (вклучено ДДВ)1200V, 60A, 270W, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode
Транзистор K30T60
450.00 ден (вклучено ДДВ)600V, 60A, 187W, IKW30N60T, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode
