Продавницата на 26.08 (Среда) и 27.08. (Четврток) ке работи од 09ч до 18ч , а нема да работи на 29.08. (Сабота).
Транзистор J175
30.00 ден (вклучено ДДВ)30V, 0.05A, 0.35W, 125Ω, J175, Field effect transistor P-channel JFET
Нема на залиха
Транзистор J304
60.00 ден (вклучено ДДВ)30V, 0.01A, 0.35W, 125Ω, J304, Field effect transistor N-channel JFET
Нема на залиха
Транзистор K30T120
430.00 ден (вклучено ДДВ)1200V, 60A, 270W, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode
Транзистор K30T60
450.00 ден (вклучено ДДВ)600V, 60A, 187W, IKW30N60T, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode
Нема на залиха
Транзистор K40T120
710.00 ден (вклучено ДДВ)1200V, 75A, 270W, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode
Нема на залиха
Транзистор K40T1202
1,090.00 ден (вклучено ДДВ)1200V, 75A, 270W, 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode, N Channel IGBT+diode
Нема на залиха
Транзистор K50T60
570.00 ден (вклучено ДДВ)600V, 80A, 333W, IKW50N60T, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode
Нема на залиха
Транзистор K75H603
770.00 ден (вклучено ДДВ)600V, 80A, 428W, IKW75N60H3, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel diode, N Channel IGBT+diode
Нема на залиха
Транзистор K75T60
710.00 ден (вклучено ДДВ)600V, 80A, 428W, IKW75N60T, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode
Нема на залиха
Транзистор KIA9N90H
230.00 ден (вклучено ДДВ)900V, 9A, 280W, 1.4Ω, Power MOSFET, N-channel FET, enhancement type
Транзистор KMB054N40DA
120.00 ден (вклучено ДДВ)SMD, 40V, 54A, 45W, 0.0085Ω, Trench Power MOSFET, N-channel FET
Транзистор KSA1298
30.00 ден (вклучено ДДВ)SMD, 30V/25V, 0.8A, 0.2W, 120MHz, Bipolar (BJT) Transistor PNP