Прикажани 17893–17904 од 18760 резултати
SMD, 60V, 2.3A, 2W, 0.25Ω, Dual P-Channel Mode Field Effect Transistor, Enhancement type
SMD, 50V, 3A, 2W, 0.13Ω, Dual N-Channel Mode Field Effect Transistor, Enhancement type
SMD, 60V, 2.5A, 3W, 0.3Ω, MOSFET P-channel FET, enhancement type
SMD, 60V, 4A, 3W, 0.1Ω, Logic Level, MOSFET N-channel FET, enhancement type
SMD, 440V, 20A, 125W, Logic Level Insulated Gate, Gate−Emitter ESD Protection, Integrated ESD Diode Protection, Ignition N Channel IGBT
600V, 80A, 257W, Trench with Field Stop Technology, N-channel IGBT
650V, 140A, 300W, High Speed, Soft Fast Reverse Recovery Diode, N-Channel IGBT+diode
55V, 82A, 163W, 0.0088Ω, Power MOSFET, gate protection diode, N-channel FET, enhancement type+diode
SMD, 55V, 82A, 163W, 0.0088Ω, Power MOSFET, gate protection diode, N-channel FET, enhancement type+diode
55V, 88A, 288W, 0.0053Ω, Power MOSFET, gate protection diode, N-channel FET, enhancement type+diode
SMD, 60V, 24A, 62.5W, 0.036Ω, Logic Level, Power MOSFET, N-channel FET, enhancement type
SMD, 30V, 54A, 37.5W, 0.0055Ω, MOSFET N-channel FET, enhancement type
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