Транзистор SI2307DS
65.00 ден (вклучено ДДВ)SMD, 30V, 3A, 1.25W, 0.08Ω, (D-S) MOSFET, P-channel FET, enhancement type+diode
Транзистор SI4134DY
120.00 ден (вклучено ДДВ)SMD, 30V, 14A, 5W, 0.014Ω, (D-S) MOSFET, N-channel FET, enhancement type+diode
Транзистор SI4425BDY-T1-E3
100.00 ден (вклучено ДДВ)SMD, 30V, 11.4A, 2.5W, 0.012Ω, TrenchFET, Power MOSFET, P-channel FET, enhancement type+diode
Транзистор SI4431BDY-T1-E3
120.00 ден (вклучено ДДВ)SMD, 30V, 7.5A, 2.5W, 0.03Ω, TrenchFET, Power MOSFET, P-channel FET, enhancement type+diode
Транзистор SI4435DY
100.00 ден (вклучено ДДВ)SMD, 30V, 8A, 2.5W, 0.02Ω, TrenchFET, Power MOSFET, P-channel FET, enhancement type+diode
Транзистор SI4450DY
120.00 ден (вклучено ДДВ)SMD, 60V, 7.5A, 2.5W, 0.02Ω, Power MOSFET, N-Channel FET, enhancement type+diode
Транзистор SI4503DY
130.00 ден (вклучено ДДВ)SMD, 30V/8V, 8.8A/4.5A, 2.27W/1.38W, 0.018Ω/0.042Ω, TrenchFET, Power MOSFET, Dual N/P-channel FET, enhancement type+diode
Транзистор SI4511DY
110.00 ден (вклучено ДДВ)SMD, 20V, 9.6A/6.2A, 2.1W, 0.0145Ω/0.033Ω, TrenchFET, Power MOSFET, Dual N/P-channel FET, enhancement type+diode
Транзистор SI4532ADY
120.00 ден (вклучено ДДВ)SMD, 30V, 4.9A/3.9A, 2W, 0.053Ω/0.08Ω, Power MOSFET, Dual N/P-channel FET, enhancement type+diode
Транзистор SI4532DY
110.00 ден (вклучено ДДВ)SMD, 30V, 3.9A/3.5A, 2W, 0.065Ω/0.085Ω, Power MOSFET, Dual N/P-channel FET, enhancement type+diode
Транзистор SI4559ADY
240.00 ден (вклучено ДДВ)SMD, 60V, 5.3A/3.9A, 3.1W, 0.058Ω/0.12Ω, TrenchFET, Power MOSFET, Dual N/P-channel FET, enhancement type+diode
Транзистор SI4800BDY
100.00 ден (вклучено ДДВ)SMD, 30V, 9A, 2.5W, 0.0185Ω, TrenchFET, Reducded Qg, Power MOSFET, N-channel FET, enhancement type+diode
