Транзистор BUZ100
130.00 ден (вклучено ДДВ)50V, 60A, 250W, 0.018Ω, Power Field effect transistor N-channel FET, enhancement type
Транзистор BUZ102S
110.00 ден (вклучено ДДВ)SMD, 55V, 52A, 120W, 0.018Ω, Power Field effect transistor N-channel FET, enhancement type
Транзистор BUZ111S
160.00 ден (вклучено ДДВ)55V, 80A, 300W, 0.008Ω, Power Field effect transistor N-channel FET, enhancement type
Транзистор BUZ22
150.00 ден (вклучено ДДВ)100V, 34A, 125W, 0.055Ω, SIPMOS Power, Field effect transistor N-channel FET, enhancement type
Транзистор BUZ342
340.00 ден (вклучено ДДВ)50V, 60A, 400W, 0.1Ω, Power Field effect transistor N-channel FET, enhancement type
Транзистор BUZ350
240.00 ден (вклучено ДДВ)200V, 22A, 125W, 0.12Ω, Power Field effect transistor N-channel FET, enhancement type
Транзистор BUZ384
340.00 ден (вклучено ДДВ)500V, 10.5A, 125W, 0.6Ω, FREDFET, Power Field effect transistor N-channel FET, enhancement type
Транзистор BUZ50A
150.00 ден (вклучено ДДВ)1000V, 2.5A, 75W, 5Ω, SIPMOS Power, Field effect transistor N-channel FET, enhancement type
Транзистор BUZ72
110.00 ден (вклучено ДДВ)100V, 10A, 40W, 0.2Ω, Power Field effect transistor N-channel FET, enhancement type+diode
Транзистор BUZ72A
180.00 ден (вклучено ДДВ)100V, 9A, 40W, 0.25Ω, Power Field effect transistor N-channel FET, enhancement type+diode
Транзистор G30N60HS
470.00 ден (вклучено ДДВ)600V, 41A, 250W, High Speed NPT-technology, N-channel IGBT
Транзистор G40N60
290.00 ден (вклучено ДДВ)600V, 40A, 175W, Anti-Parallel Hyperfast Diode, N-Channel IGBT+diode
