Транзистор IKW50N65H5
780.00 ден (вклучено ДДВ)650V, 80A, 305W, K50H655 , Highspeed 5 IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft antiparallel diode, N-Channel IGBT+diode
Транзистор IKW75N60T
710.00 ден (вклучено ДДВ)600V, 80A, 428W, K75T60 TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon diode, N Channel IGBT+diode
Транзистор IPB09N03LA
100.00 ден (вклучено ДДВ)SMD, 25V, 50A, 63W, 0.0155Ω, Logic Level, OptiMOS®2 Power MOSFET, N-channel FET, enhancement type
Транзистор IPD50R380CE
220.00 ден (вклучено ДДВ)SMD, 500V, 14.1A, 98W, 0.38Ω, CoolMOS CE Power MOSFET, N-channel FET, enhancement type
Транзистор IPP034NE7N3G
350.00 ден (вклучено ДДВ)75V, 100A, 214W, 0.0034Ω, OptiMOS 3 Power MOSFET, N-channel FET, enhancement type
Транзистор IPP200N25N
260.00 ден (вклучено ДДВ)250V, 64A, 300W, 0.02Ω, Power MOSFET, N-channel FET, enhancement type
Транзистор IPP230N06L3G
230.00 ден (вклучено ДДВ)60V, 30A, 36W, 0.023Ω, Logic Level, Power MOSFET, N-channel FET, enhancement type
Транзистор IPP50R380CE
130.00 ден (вклучено ДДВ)500V, 14.1A, 98W, 0.38Ω, 5R380CE, CoolMOS CE Power MOSFET, N-channel FET, enhancement type
Транзистор IPP60R099C6
460.00 ден (вклучено ДДВ)600V, 37.9A, 278W, 0.099Ω, CoolMOS C6 Power Transistor, N-channel FET, enhancement type
Транзистор IPP60R160C6
350.00 ден (вклучено ДДВ)600V, 23.8A, 176W, 0.16Ω, CoolMOS C6 Power Transistor, N-channel FET, enhancement type
Транзистор IPP60R199CP
270.00 ден (вклучено ДДВ)600V, 16A, 139W, 0.199Ω, CoolMOS Power Transistor, N-channel FET, enhancement type
Транзистор IPP60R385CP
280.00 ден (вклучено ДДВ)600V, 9A, 83W, 0.385Ω, CoolMOS Power Transistor, N-channel FET, enhancement type
