Транзистор IPW60R099CP
900.00 ден (вклучено ДДВ)600V, 31A, 255W, 0.099Ω, CoolMOS Power Transistor, N-channel FET, enhancement type
Транзистор IPW60R160C6
920.00 ден (вклучено ДДВ)600V, 23.8A, 176W, 0.16Ω, CoolMOS C6 Power Transistor, N-channel FET, enhancement type
Транзистор IPW60R190C6
500.00 ден (вклучено ДДВ)600V, 20.2A, 151W, 0.19Ω, CoolMOS C6 Power Transistor, N-channel FET, enhancement type
Транзистор IPW60R199CP
360.00 ден (вклучено ДДВ)600V, 16A, 139W, 0.199Ω, CoolMOS Power Transistor, N-channel FET, enhancement type
Транзистор IRF9952
130.00 ден (вклучено ДДВ)SMD, 30V, 3.5A/2.3A, 2W, 0.1Ω/0.25Ω, HEXFET Power MOSFET, Dual N/P-channel FET, enhancement type+diode
Транзистор IRF9953
160.00 ден (вклучено ДДВ)SMD, 30V, 2.3A, 2W, 0.25Ω, HEXFET Power MOSFET, Dual P-channel FET, enhancement type+diode
Транзистор ITS4140N
200.00 ден (вклучено ДДВ)SMD, 60V, 0.7A, 1.7W, 1Ω, SIPMOS Technology, Power MOSFET, N-channel FET
Транзистор ITS4141N
200.00 ден (вклучено ДДВ)SMD, 47V, 1.1A, 1.4W, 0.2Ω, SIPMOS Technology, Power MOSFET, N-channel FET
Транзистор K30T120
430.00 ден (вклучено ДДВ)1200V, 60A, 270W, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode
Транзистор K30T60
450.00 ден (вклучено ДДВ)600V, 60A, 187W, IKW30N60T, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode
Транзистор K40T120
710.00 ден (вклучено ДДВ)1200V, 75A, 270W, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode, N Channel IGBT+diode
Транзистор K40T1202
1,090.00 ден (вклучено ДДВ)1200V, 75A, 270W, 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode, N Channel IGBT+diode
