Транзистор BS250
35.00 ден (вклучено ДДВ)45V, 0.23A, 0.7W, 14Ω, Logic Level, Field effect transistor P-channel FET, enhancement type
Фотодиода BPW50
25.00 ден (вклучено ДДВ)32V, 2nA, 925nm, 65°, 50nS, 20pF, IR Receiver PIN Photo Diode
45V, 0.23A, 0.7W, 14Ω, Logic Level, Field effect transistor P-channel FET, enhancement type
32V, 2nA, 925nm, 65°, 50nS, 20pF, IR Receiver PIN Photo Diode