Прикажани 10189–10200 од 11615 резултати
1200V, 30A, 217W, Trench and Fieldstop technology with soft, fast recovery anti-parallel diode, N-Channel IGBT+diode
600V, 45A, 187W, TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon diode, N Channel IGBT+diode
1200V, 80A, 483W, (K40H1203) Trench and Fieldstop technology with soft, fast recovery anti-parallel diode, N Channel IGBT+diode
1200V, 75A, 480W, (K40T1202) TrenchStop 2nd Generation Series with soft, fast recovery anti-parallel Emitter Controlled Diode
600V, 80A, 306W, (K40H603) Trench and Fieldstop technology, soft, fast recovery anti-parallel diode, N-Channel IGBT+diode
600V, 100A, 333W, K50H603 , Highspeed TrenchStop and Fieldstop technology, Verysoft,fast recovery anti-parallel diode, N-channel IGBT+diode
650V, 80A, 305W, K50H655 , Highspeed 5 IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft antiparallel diode, N-Channel IGBT+diode
600V, 80A, 428W, K75T60 TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon diode, N Channel IGBT+diode
SMD, 25V, 50A, 63W, 0.0155Ω, Logic Level, OptiMOS®2 Power MOSFET, N-channel FET, enhancement type
SMD, 500V, 14.1A, 98W, 0.38Ω, CoolMOS CE Power MOSFET, N-channel FET, enhancement type
SMD, 700V, 12.5A, 59.5W, 0.36Ω, Power Transistor, N-channel FET, enhancement type
75V, 100A, 214W, 0.0034Ω, OptiMOS 3 Power MOSFET, N-channel FET, enhancement type
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