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Транзистор IKW40N60H3

590.00 ден (вклучено ДДВ)
600V, 80A, 306W, (K40H603) Trench and Fieldstop technology, soft, fast recovery anti-parallel diode, N-Channel IGBT+diode

Транзистор IKW50N60H3

620.00 ден (вклучено ДДВ)
600V, 100A, 333W, K50H603 , Highspeed TrenchStop and Fieldstop technology, Verysoft,fast recovery anti-parallel diode, N-channel IGBT+diode

Транзистор IKW50N65H5

780.00 ден (вклучено ДДВ)
650V, 80A, 305W, K50H655 , Highspeed 5 IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft antiparallel diode, N-Channel IGBT+diode

Транзистор IKW75N60T

710.00 ден (вклучено ДДВ)
600V, 80A, 428W, K75T60 TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon diode, N Channel IGBT+diode

Транзистор IPB09N03LA

100.00 ден (вклучено ДДВ)
SMD, 25V, 50A, 63W, 0.0155Ω, Logic Level, OptiMOS®2 Power MOSFET, N-channel FET, enhancement type

Транзистор IPD50R380CE

220.00 ден (вклучено ДДВ)
SMD, 500V, 14.1A, 98W, 0.38Ω, CoolMOS CE Power MOSFET, N-channel FET, enhancement type

Транзистор IPD70R360P7S

340.00 ден (вклучено ДДВ)
SMD, 700V, 12.5A, 59.5W, 0.36Ω, Power Transistor, N-channel FET, enhancement type

Транзистор IPP034NE7N3G

350.00 ден (вклучено ДДВ)
75V, 100A, 214W, 0.0034Ω, OptiMOS 3 Power MOSFET, N-channel FET, enhancement type

Транзистор IPP200N25N

260.00 ден (вклучено ДДВ)
250V, 64A, 300W, 0.02Ω, Power MOSFET, N-channel FET, enhancement type

Транзистор IPP230N06L3G

230.00 ден (вклучено ДДВ)
60V, 30A, 36W, 0.023Ω, Logic Level, Power MOSFET, N-channel FET, enhancement type

Транзистор IPP50R380CE

130.00 ден (вклучено ДДВ)
500V, 14.1A, 98W, 0.38Ω, 5R380CE, CoolMOS CE Power MOSFET, N-channel FET, enhancement type

Транзистор IPP60R099C6

460.00 ден (вклучено ДДВ)
600V, 37.9A, 278W, 0.099Ω, CoolMOS C6 Power Transistor, N-channel FET, enhancement type