Транзистор H20R1202
420.00 ден (вклучено ДДВ)1200V, 40A, 330W, Reverse conducting Transistor IGBT with monolithic body diode, IHW20N120R2
Транзистор H20R1203
440.00 ден (вклучено ДДВ)1200V, 40A, 310W, Reverse conducting Transistor IGBT with monolithic body diode, IHW20N120R3
Транзистор H5N3011P
440.00 ден (вклучено ДДВ)300V, 88A, 150W, 0.048Ω/10V, Metal oxide N-channel FET, enhancement type+diode
Транзистор HAT2215R
160.00 ден (вклучено ДДВ)SMD, 80V, 3.4A, 1.5W, 0.145Ω, Dual, 4.5V-Drive Power Amplifier, Silicon N Channel Power MOSFET with diode
Транзистор HAT3010R
310.00 ден (вклучено ДДВ)SMD, 60V, 5A/6A, 2W, 0.04Ω, Dual, 4.5V-Drive Power Amplifier, Silicon N/P Channel Power MOS FET with diode
Транзистор HGT1S7N60A4DS
180.00 ден (вклучено ДДВ)SMD, 600V, 34A, 125W, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode IGBT
Транзистор HGTG11N120CND
410.00 ден (вклучено ДДВ)1200V, 43A, 298W, NPT Series, Anti-Parallel Hyperfast Diode, N-Channel IGBT+diode
Транзистор HGTG12N60A4D
290.00 ден (вклучено ДДВ)600V, 54A, 167W, SMPS Series Anti-Parallel Hyperfast Diode, N-Channel IGBT+diode
Транзистор HGTG12N60C3D
330.00 ден (вклучено ДДВ)600V, 24A, 104W, UFS Series Anti-Parallel Hyperfast Diode, N-Channel IGBT+diode